The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2011

Filed:

Feb. 14, 2007
Applicants:

Hidekazu Nakanishi, Osaka, JP;

Ryoichi Takayama, Osaka, JP;

Yukio Iwasaki, Osaka, JP;

Yosuke Hamaoka, Osaka, JP;

Hiroyuki Nakamura, Osaka, JP;

Inventors:

Hidekazu Nakanishi, Osaka, JP;

Ryoichi Takayama, Osaka, JP;

Yukio Iwasaki, Osaka, JP;

Yosuke Hamaoka, Osaka, JP;

Hiroyuki Nakamura, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/64 (2006.01); H03H 9/72 (2006.01); H03H 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p, a width between the electrode fingers is p, and a thickness of the IDT is h, following relations are satisfied, p+p=p, and h/(2×p)≧4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.


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