The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jun. 04, 2009
Yoshihiro Motoichi, Atsugi, JP;
Daisuke Suzuki, Atsugi, JP;
Yoshihiro Takahashi, Atsugi, JP;
Gentaro Kurokawa, Atsugi, JP;
Yoshihiro Motoichi, Atsugi, JP;
Daisuke Suzuki, Atsugi, JP;
Yoshihiro Takahashi, Atsugi, JP;
Gentaro Kurokawa, Atsugi, JP;
Mitsumi Electric Co., Ltd., Tama-Shi, JP;
Abstract
Disclosed is a charge-controlling semiconductor integrated circuit including: a current-controlling MOS transistor; a current detection circuit including a 1/N size current-detecting MOS transistor; and a gate voltage control circuit, wherein the current detection circuit includes an operational amplifier circuit, a bias condition of the current-detecting MOS transistor becomes same as the current-controlling MOS transistor based on an operational amplifier circuit output, voltage drops in lines from drain electrode to a corresponding input point of the operational amplifier circuit become the same by a parasitic resistance, and when the output of the operational amplifier circuit is applied to a control terminal of the bias condition controlling transistor, the drain voltages become the same potential, and the line from the drain electrode of the current-detecting MOS transistor to the input point is formed to be redundantly arranged inside the chip so that a parasitic resistance becomes a predetermined value.