The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2011

Filed:

May. 29, 2008
Applicants:

William L. Erdman, Moraga, CA (US);

Michael R. Behnke, Livermore, CA (US);

Steve Tonks, Sarriguren, ES;

Miguel Núñez Polo, Sarriguren, ES;

Inventors:

William L. Erdman, Moraga, CA (US);

Michael R. Behnke, Livermore, CA (US);

Steve Tonks, Sarriguren, ES;

Miguel Núñez Polo, Sarriguren, ES;

Assignee:

Acciona Windpower, S.A., Sarriguren (Navarra), ES;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
F03D 9/00 (2006.01); H02P 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosure details implementations of apparatuses, methods, and systems for facilitating efficient operational characteristics for wind turbine generators. The system includes features that facilitate protecting the power semiconductors used in the power converters of variable speed power generation systems from excessive junction temperatures. These features may be achieved by implementing a synchronous speed avoidance (SSA) controller implemented to facilitate a determined active control range as an electrical torque/power-generator rotor speed controller. The determined active control range may be centered around a generator synchronous speed. The upper and lower bounds of the active control range are determined based on operational junction temperature characteristics of power semiconductors used within a power converter, reliability characteristics of the power semiconductors and/or current ratings of the power semiconductors.


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