The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jan. 27, 2006
Hiroshi Kanamori, Tokyo, JP;
Shigeki Otsuka, Chiba, JP;
Yuichi Morita, Gunma, JP;
Akira Suzuki, Gunma, JP;
Hiroshi Kanamori, Tokyo, JP;
Shigeki Otsuka, Chiba, JP;
Yuichi Morita, Gunma, JP;
Akira Suzuki, Gunma, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
The invention is directed to prevent corrosion of a semiconductor device. In the semiconductor device manufacturing method of the invention, a semiconductor substrate is etched from its back surface in a position corresponding to a first wiring formed on the semiconductor substrate with a first insulation film therebetween, to form a first opening exposing the first insulation film. Next, the insulation film exposed in the first opening is etched to form a second opening exposing the first wiring, and then the semiconductor substrate is etched to increase a diameter of the first opening and form a first opening having the larger diameter. Then, a second insulation film is formed on the back surface of the semiconductor substrate including on the first wiring through the first and second openings, and then the second insulation film covering the first wiring is etched.