The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2011

Filed:

Jun. 24, 2008
Applicants:

Mitsuyoshi Mori, Kyoto, JP;

Yasuhiro Shimada, Kyoto, JP;

Takuma Katayama, Kyoto, JP;

Kenji Taniguchi, Osaka, JP;

Masayuki Furuhashi, Osaka, JP;

Inventors:

Mitsuyoshi Mori, Kyoto, JP;

Yasuhiro Shimada, Kyoto, JP;

Takuma Katayama, Kyoto, JP;

Kenji Taniguchi, Osaka, JP;

Masayuki Furuhashi, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/142 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plurality of pixel portions () are formed on a silicon substrate (). A photoelectric converter portion () constituting each of the pixel portions () is electrically isolated by an element isolation portion () comprising an insulating film formed on the silicon substrate (). The photoelectric converter portion () partitioned by the element isolation portion () is so formed that a crystal orientation of the sides in contact with the element isolation portion () corresponds to a <00-1> direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion () and maintain high sensitivity even if the pixel portions () are made smaller in size.


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