The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Dec. 20, 2006
Jeo-young Shim, Yongin-si, KR;
Kyu-sang Lee, Yongin-si, KR;
Kyu-tae Yoo, Yongin-si, KR;
Won-seok Chung, Yongin-si, KR;
Jeo-young Shim, Yongin-si, KR;
Kyu-sang Lee, Yongin-si, KR;
Kyu-tae Yoo, Yongin-si, KR;
Won-seok Chung, Yongin-si, KR;
Abstract
A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor. The field effect transistor for detecting ionic material includes a substrate formed of a semiconductor material, a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate, a channel region interposed between the source region and the drain region, an insulating layer disposed on the channel region and formed of an electrically insulating material, a first reference electrode disposed at an edge of the upper portion of the insulating layer and a second reference electrode disposed to be spaced apart from the insulating layer.