The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Nov. 27, 2006
Hiromasa Fujimoto, Yokkaichi, JP;
Hiromasa Fujimoto, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A memory cell array of a NOR type flash memory is constructed by arranging memory cell transistors in a matrix, each of the memory cell transistors includes a contact connecting a semiconductor substrate to an overlayer wire. Columns of the memory cell transistors are isolated from one another by shallow trench isolations. The height of top surface of a filling oxide film in the shallow trench isolation which is adjacent to each drain contact is equal to that of top surface of the drain region. The top surface of a filling oxide film in the shallow trench isolation which is adjacent to each channel region is higher than a top surface of the semiconductor substrate in the channel region.