The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Apr. 17, 2009
Applicants:
Sungho Park, Yongin-si, KR;
Ihun Song, Seongnam-si, KR;
Kiha Hong, Seoul, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor, a semiconductor device including the transistor and methods of manufacturing the same are provided, the transistor including a threshold voltage adjusting layer contacting a channel layer. A source electrode and a drain electrode contacting may be formed opposing ends of the channel layer. A gate electrode separated from the channel layer may be formed. A gate insulating layer may be formed between the channel layer and the gate electrode.
Park, Sungho. (2011). Transistor, semiconductor device including a transistor and methods of manufacturing the same (U.S. Patent No. 8035101). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8035101
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile