The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jan. 16, 2009
Applicant:
Takuya Kobayashi, Yokohama, JP;
Inventor:
Takuya Kobayashi, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, the method including: forming a first region and a second region in a substrate; forming the high-permittivity insulating film on the substrate in the first region and in the second region; forming a nitride film on the high-permittivity insulating film in the second region; forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region; forming a metal film on the cap film; and performing a heating process.