The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Aug. 04, 2009
Applicants:
Edward Yi Chang, Hsinchu, TW;
Shih-hsuan Tang, Hsinchu, TW;
Yue-cin Lin, Hsinchu, TW;
Inventors:
Assignee:
National Chiao Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The method is disclosed that Siis implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GeSibuffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GeSibuffer layers (Si/GeSi/GeSi/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GeSibuffer layer. Finally, grow up high efficiency III-V solar cell on GeSibuffer layer.