The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jun. 09, 2009
Hyoung Soon Yune, Seoul, KR;
Hyoung Soon Yune, Seoul, KR;
Hynix Semiconductor, Inc., Icheon, KR;
Abstract
A method for forming a fine contact hole of a semiconductor device comprises performing two-step etching processes using a first exposure mask including a plurality of rectangular light transmitting regions each having a given pitch and a second exposure mask including a plurality of rectangular light transmitting regions arranged a shielding region of the first exposure mask with a 'cross (+)' shape in the center of rectangular light transmitting regions of the second exposure mask. Each of four corner regions of the light transmitting regions of the first exposure mask is overlapped with four corner regions of rectangular light transmitting regions of the second exposure mask. As a result, the fine contact hole pattern obtained by the method has a uniform size.