The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jul. 06, 2005
Applicants:
Jean Dijon, Champagnier, FR;
Hélène Le Poche, Grenoble, FR;
Thomas Goislard DE Monsabert, Saint Ismier, FR;
Inventors:
Jean Dijon, Champagnier, FR;
Hélène Le Poche, Grenoble, FR;
Thomas Goislard de Monsabert, Saint Ismier, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention concerns a method for growing oriented carbon nanotubes on a sample using a target of carbon or a variety of carbon in a deposition chamber where a plasma predominates. The sample () is arranged in contact with the target (), in such a way that the target has a free surface and that the sample offers a free surface, the plasma causing the growth of carbon nanotubes on the free surface of the sample.