The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Jun. 16, 2009
Virgile Javerliac, Grenoble, FR;
Neal Berger, Cupertino, CA (US);
Kenneth Mackay, St. Martin le Vinoux, FR;
Jean-pierre Nozieres, Le Sappey-en-Chartreuse, FR;
Virgile Javerliac, Grenoble, FR;
Neal Berger, Cupertino, CA (US);
Kenneth Mackay, St. Martin le Vinoux, FR;
Jean-Pierre Nozieres, Le Sappey-en-Chartreuse, FR;
Crocus Technology S.A., Grenoble Cedex, FR;
Abstract
A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.