The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Mar. 21, 2008
Jonathan Schmitt, Eden Prairie, MN (US);
Roy Carlson, Plymouth, MN (US);
Jonathan Schmitt, Eden Prairie, MN (US);
Roy Carlson, Plymouth, MN (US);
Broadcom Corporation, Irvine, CA (US);
Abstract
A disclosed embodiment is a programmable memory cell having improved IV characteristics comprising a thick oxide spacer transistor interposed between a programmable thin oxide antifuse and a thick oxide access transistor. The spacer transistor separates a rupture site formed during programming the programmable antifuse from the access transistor, so as to result in the improved IV characteristics. The programmable antifuse is proximate to one side of the spacer transistor, while the access transistor is proximate to an opposite side of the spacer transistor. The source region of the access transistor is coupled to ground, and the drain region of the access transistor also serves as the source region of the spacer transistor. The access transistor is coupled to a row line, while the spacer transistor and the programmable antifuse are coupled to a column line. The rupture site is formed during programming by applying a programming voltage to the programmable antifuse.