The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Oct. 21, 2008
Tsutomu Chou, Tokyo, JP;
Tomohito Mizuno, Tokyo, JP;
Koji Shimazawa, Tokyo, JP;
Yoshihiro Tsuchiya, Tokyo, JP;
Shinji Hara, Tokyo, JP;
Hironobu Matsuzawa, Tokyo, JP;
Tsutomu Chou, Tokyo, JP;
Tomohito Mizuno, Tokyo, JP;
Koji Shimazawa, Tokyo, JP;
Yoshihiro Tsuchiya, Tokyo, JP;
Shinji Hara, Tokyo, JP;
Hironobu Matsuzawa, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.