The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Jul. 30, 2009
Applicants:

Zhijie Xiong, Austin, TX (US);

Harish S. Muthali, Round Rock, TX (US);

Inventors:

Zhijie Xiong, Austin, TX (US);

Harish S. Muthali, Round Rock, TX (US);

Assignee:

QUALCOMM, Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03G 3/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques for designing a low-noise amplifier (LNA) for operation over a wide range of input power levels. In an exemplary embodiment, a first gain path is provided in parallel with a second gain path. The first gain path includes a differential cascode amplifier with inductor source degeneration. The second gain path includes a differential cascode amplifier without inductor source degeneration. The cascode transistors of the gain paths may be selectively biased to enable or disable the first and/or second gain path. By selectively biasing the cascode transistors and input transistors, various combinations of the first and second gain paths may be selected to provide an optimized gain configuration for any input power level.


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