The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Apr. 14, 2008
Applicants:
Meng-hsueh Chiang, Yilan, TW;
Ching-te Kent Chuang, South Salem, NY (US);
Keunwoo Kim, Somers, NY (US);
Inventors:
Meng-Hsueh Chiang, Yilan, TW;
Ching-Te Kent Chuang, South Salem, NY (US);
Keunwoo Kim, Somers, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/20 (2006.01); H03K 19/094 (2006.01);
U.S. Cl.
CPC ...
Abstract
Techniques for employing multi-gate field effect transistors (FETS) in logic circuits formed from logic gates are provided. Double-gate transistors that conduct only when both transistor gates are active can be used to reduce the number of devices hitherto required in series or 'stacked' portions of logic gates. Circuit area can be reduced and performance can be enhanced.