The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Jan. 14, 2009
Applicants:

Srinivasa R. Parthasarathy, Singapore, SG;

Lee NI Chung, San Jose, CA (US);

Jian Jun Shi, Singapore, SG;

Randy J. Simmons, San Jose, CA (US);

Inventors:

Srinivasa R. Parthasarathy, Singapore, SG;

Lee Ni Chung, San Jose, CA (US);

Jian Jun Shi, Singapore, SG;

Randy J. Simmons, San Jose, CA (US);

Assignee:

Xilinx, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

Operation of an internal voltage supply level (Vgg) of an IC is characterized over operating temperature or at a selected temperature to determine a temperature-equivalent internal voltage level. The internal voltage supply of the IC is set to the temperature-equivalent level, and the IC is tested at room temperature to screen for low-temperature defects or high-temperature defects.


Find Patent Forward Citations

Parthasarathy, Srinivasa. (2011). Internal voltage level shifting for screening cold or hot temperature defects using room temperature testing (U.S. Patent No. 8030954). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8030954

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…