The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Jan. 10, 2008
Applicants:

Daisuke Oshida, Kawasaki, JP;

Toshiyuki Takewaki, Kawasaki, JP;

Takuji Onuma, Kawasaki, JP;

Koichi Ohto, Kawasaki, JP;

Inventors:

Daisuke Oshida, Kawasaki, JP;

Toshiyuki Takewaki, Kawasaki, JP;

Takuji Onuma, Kawasaki, JP;

Koichi Ohto, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/92 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulating film and the copper interconnect; a second insulating interlayer formed over the first insulating interlayer; and an electroconductive layer formed over the second insulating interlayer, wherein the top surface of at least one hillock highest of all hillocks is brought into contact with the lower surface of the second insulating interlayer is provided.


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