The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Aug. 12, 2009
Miho Watanabe, Tokyo, JP;
Masaru Izumisawa, Himeji, JP;
Yasuto Sumi, Himeji, JP;
Hiroshi Ohta, Himeji, JP;
Wataru Sekine, Hemji, JP;
Wataru Saito, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Nana Hatano, Kawasaki, JP;
Miho Watanabe, Tokyo, JP;
Masaru Izumisawa, Himeji, JP;
Yasuto Sumi, Himeji, JP;
Hiroshi Ohta, Himeji, JP;
Wataru Sekine, Hemji, JP;
Wataru Saito, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Nana Hatano, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately arranged along a direction parallel to a surface of the first semiconductor layer, wherein the device part is provided with a first region and a second region, each of which includes at least one of the second semiconductor layers and at least one of the third semiconductor layers, and with regard to a difference value ΔN (=N−N) obtained by subtracting an impurity amount Nper unit length of each of the third semiconductor layers from an impurity amount Nper unit length of each of the second semiconductor layers, a difference value ΔNwhich is the difference value ΔN in the first region of the device part, a difference value ΔNwhich is the difference value ΔN in the second region of the device part, and a difference value ΔNwhich is the difference value ΔN in the terminal part satisfy a relationship of ΔN>ΔN>ΔN.