The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Dec. 22, 2010
Tetsuya Ohnishi, Fukuyama, JP;
Naoyuki Shinmura, Fukuyama, JP;
Shinobu Yamazaki, Kasaoka, JP;
Takahiro Shibuya, Fukuyama, JP;
Takashi Nakano, Fukuyama, JP;
Masayuki Tajiri, Fukuyama, JP;
Shigeo Ohnishi, Fukuyama, JP;
Tetsuya Ohnishi, Fukuyama, JP;
Naoyuki Shinmura, Fukuyama, JP;
Shinobu Yamazaki, Kasaoka, JP;
Takahiro Shibuya, Fukuyama, JP;
Takashi Nakano, Fukuyama, JP;
Masayuki Tajiri, Fukuyama, JP;
Shigeo Ohnishi, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.