The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Oct. 15, 2009
Nobuhiro Ubahara, Tokushima, JP;
Nobuhiro Ubahara, Tokushima, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emittingcomprises an active layerdisposed between an n-type nitride semiconductor layerand a p-type nitride semiconductor layer. The active layercomprises a first well layer, second well layersinterposing the first well layerand disposed at outermost sides among the well layers, and barrier layersdisposed between each of the well layers. The second well layercomprises a nitride semiconductor having a larger band gap energy than the band gap energy of a nitride semiconductor constituting the first well layer, and the nitride semiconductor light emitting elementhas peaks in the emission spectrum respectively corresponding to the first well layerand the second well layer