The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Nov. 06, 2007
Digh Hisamoto, Kokubunji, JP;
Shinichi Saito, Kawasaki, JP;
Shinichiro Kimura, Kunitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of waveguide thereof are provided. The light emitting diode of the invention comprises a first electrode for implanting electrons, a second electrode for implanting holes, and a light emitting section electrically connected to the first and the second electrode, wherein the light emitting section is made out of single crystalline silicon and has a first surface and a second surface facing the first surface, wherein with respect to plane orientation (100) of the first and second surfaces, the light emitting section crossing at right angles to the first and second surfaces is made thinner, and wherein a material having a high refractive index is arranged around the thin film section.