The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Nov. 13, 2009
Jeong Tak OH, Gyunggi-do, KR;
Yong Chun Kim, Gyunggi-do, KR;
Dong Joon Kim, Gyunggi-do, KR;
Dong Ju Lee, Gyunggi-do, KR;
Jeong Tak Oh, Gyunggi-do, KR;
Yong Chun Kim, Gyunggi-do, KR;
Dong Joon Kim, Gyunggi-do, KR;
Dong Ju Lee, Gyunggi-do, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects.