The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Aug. 06, 2009
Applicants:

Ji-won Choi, Seoul, KR;

Won Kook Choi, Seoul, KR;

Seok-jin Yoon, Seoul, KR;

Inventors:

Ji-Won Choi, Seoul, KR;

Won Kook Choi, Seoul, KR;

Seok-Jin Yoon, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/468 (2006.01); C04B 35/47 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a dielectric thin film composition showing linear dielectric properties, in which tin oxides (SnO) are introduced into a (Ba,Sr)TiO(BSTO) dielectric thin film in a continuous diffusion gradient manner in composition. Since the non-linear dielectric properties of BSTO are converted to linear dielectric properties by the addition of SnOaccording to the present invention, the dielectric thin film composition of the present invention is characterized in that: there is little change in the capacitance according to the applied electric field; it has a high dielectric constant capable of showing a desired capacitance even at a thickness suitable for preventing the occurrence of electron tunneling; and it exhibits paraelectric properties similar to the conventional dielectric substances such as SiOwhile having a very low dielectric loss.


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