The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Jan. 27, 2010
Masatoshi Takahashi, Tokyo, JP;
Hiroyuki Ohtsuka, Tokyo, JP;
Hideki Matsumura, Kanazawa, JP;
Atsushi Masuda, Tsukuba, JP;
Akira Izumi, Kitakyushu, JP;
Masatoshi Takahashi, Tokyo, JP;
Hiroyuki Ohtsuka, Tokyo, JP;
Hideki Matsumura, Kanazawa, JP;
Atsushi Masuda, Tsukuba, JP;
Akira Izumi, Kitakyushu, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A solar cell () comprising a semiconductor solar cell substrate () having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate () is coated with a light receiving surface side insulating film () composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film () is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.