The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Jul. 23, 2009
Mi-ran Park, Daejeon, KR;
Jae-sik Sim, Daejeon, KR;
Yong-hwan Kwon, Daejeon, KR;
Bongki Mheen, Daejeon, KR;
Dae Kon OH, Daejeon, KR;
Mi-Ran Park, Daejeon, KR;
Jae-Sik Sim, Daejeon, KR;
Yong-Hwan Kwon, Daejeon, KR;
Bongki Mheen, Daejeon, KR;
Dae Kon Oh, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.