The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
May. 29, 2009
Michael D. Turner, Poughkeepsie, NY (US);
Christopher J. Rando, Wappingers Falls, NY (US);
Michael D. Turner, Poughkeepsie, NY (US);
Christopher J. Rando, Wappingers Falls, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor process and apparatus provides an encapsulated shallow trench isolation region by forming a silicon nitride layer () to cover a shallow trench isolation region (), depositing a protective dielectric layer () over the silicon nitride layer (), and polishing and densifying the protective dielectric layer () to thereby form a densified silicon nitride encapsulation layer () over the shallow trench isolation region ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile