The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Jan. 29, 2010
Toru Yoshie, Kanagawa, JP;
Toru Yoshie, Kanagawa, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
A silicon carbide semiconductor device is fabricated by forming an amorphous layer in a semiconductor layer of a silicon carbide substrate at a boundary between a cell forming area and an outer peripheral area, forming an outer peripheral insulating film over the semiconductor layer in the outer peripheral area, and thermally oxidizing an upper surface of the semiconductor layer in the cell forming area and at least a portion of the amorphous layer exposed by the outer peripheral insulating film to form a gate oxide film including a stepped portion of increased thickness adjacent the outer peripheral insulating film. The gate electrode layer is then formed which extends from the gate oxide film to above the outer peripheral insulating film.