The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8030158 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 04, 2011

Filed:

Nov. 23, 2009
Applicants:

Chun Soo Kang, Yongin-si, KR;

Jin Hyuck Jeon, Icheon-si, KR;

Inventors:

Chun Soo Kang, Yongin-si, KR;

Jin Hyuck Jeon, Icheon-si, KR;

Assignee:

Hynix Semiconductor, Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a method for fabricating a contact in a semiconductor device, including: obtaining a pattern layout including bit lines arranged across a cell matrix region of a semiconductor substrate, cell storage node contacts arranged to pass through a portion of a first interlayer insulation layer between the bit lines, and dummy storage node contacts additionally arranged in an end of the arrangement of the cell storage node contacts; and forming the cell storage node contacts and the dummy storage node contacts using the pattern layout.


Find Patent Forward Citations

Kang, Chun. (2011). Method for fabricating contacts in semiconductor device (U.S. Patent No. 8030158). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8030158

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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