The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Apr. 02, 2010
Amane Mochizuki, San Diego, CA (US);
Toshitaka Nakamura, Oceanside, CA (US);
Masakatsu Urairi, Palo Alto, CA (US);
Guang Pan, Carsbad, CA (US);
Amane Mochizuki, San Diego, CA (US);
Toshitaka Nakamura, Oceanside, CA (US);
Masakatsu Urairi, Palo Alto, CA (US);
Guang Pan, Carsbad, CA (US);
Nitto Denko Corporation, Osaka, JP;
Abstract
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.