The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Dec. 27, 2010
Takeshi Kamikawa, Mihara, JP;
Eiji Yamada, Mihara, JP;
Masahiro Araki, Mihara, JP;
Yoshika Kaneko, Funabashi, JP;
Takeshi Kamikawa, Mihara, JP;
Eiji Yamada, Mihara, JP;
Masahiro Araki, Mihara, JP;
Yoshika Kaneko, Funabashi, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate () with a defect density as low as 10cmor less, a stripe-shaped depressed portion () is formed by etching. On this substrate (), a nitride semiconductor film () is grown, and a laser stripe () is formed off the area right above the depressed portion (). With this structure, the laser stripe () is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film () develops reduced cracks, resulting in a greatly increased yield rate.