The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Aug. 13, 2009
Applicants:
Yasuo Sato, Kanagawa, JP;
Jugo Mitomo, Kanagawa, JP;
Mikihiro Yokozeki, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Inventors:
Yasuo Sato, Kanagawa, JP;
Jugo Mitomo, Kanagawa, JP;
Mikihiro Yokozeki, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×10cmor less, and the impurity concentration of aluminum in the active layer is 1×10cmor less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.