The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Aug. 21, 2008
Applicants:

Sung IL Park, Daegu-si, KR;

Dae Lim Park, Gyeongsangbuk-do, KR;

Inventors:

Sung Il Park, Daegu-si, KR;

Dae Lim Park, Gyeongsangbuk-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a liquid crystal display device is disclosed. The method includes forming a gate electrode, a gate pad, a gate line on a substrate by using a first mask; forming a gate insulating film, an active layer, an ohmic contact layer and a conductive layer in sequence above the substrate including the gate electrode, the gate line and the gate pad; forming an active pattern, an ohmic contact pattern, source/drain electrodes, a data line and a data pad by using a second mask; forming a pixel electrode on the gate insulating film in a pixel region by using a third mask, to contact with the drain electrode; exposing the active pattern by etching the ohmic contact pattern using the source/drain electrodes as an etching mask; forming a passivation film above the substrate including the source/drain electrodes, the data line and the data pad; forming a first contact hole for exposing the gate pad and a second contact hole for exposing the data pad by etching the passivation and/or gate insulating films using a fourth mask; and forming a common electrode having a plurality of holes on the substrate by using a fifth mask.


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