The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Oct. 04, 2006
Vincent G Harris, Sharon, MA (US);
Zhaohui Chen, Medford, MA (US);
Vincent G Harris, Sharon, MA (US);
Zhaohui Chen, Medford, MA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A semiconductor device including a ferrite layer, a widebandgap semiconductor material layer, and a buffer layer. The buffer layer comprises an interweaving of MgO and BaM. In addition the buffer layer allows a gradual reduction of the interfacial stress, and mediates the strain between a silicon substrate and a ferrite layer of the device. In addition, the buffer layer allows for high crystal alignment resulting in high crystal quality and thereby producing a low microwave loss semiconductor device. The buffer layer also minimizes chemical interdiffusion of atoms between the substrate and the ferrite layer.