The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Sep. 08, 2008
Applicants:

Yoshio Kikuchi, Nagoya, JP;

Shinji Kawasaki, Nagoya, JP;

Inventors:

Yoshio Kikuchi, Nagoya, JP;

Shinji Kawasaki, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/12 (2006.01); B22F 3/11 (2006.01); B01J 27/224 (2006.01); B01J 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A silicon carbide porous object includes silicon carbide as an aggregate and metal silicon as a binder, the particles of silicon carbide being bonded to one another so as to have pores thereamong. A method for producing a silicon carbide porous object includes: firing raw materials formed by mixing silicon carbide and metal silicon with metal aluminum or an alloy including metal silicon and metal aluminum in an inert gas atmosphere or a reduced-pressure atmosphere to produce a metal aluminum-metal silicon-silicon carbide porous object; and oxidizing and firing the metal aluminum-metal silicon-silicon carbide porous object in an oxygen atmosphere.


Find Patent Forward Citations

Kikuchi, Yoshio. (2011). Porous silicon carbide and process for producing the same (U.S. Patent No. 8029882). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8029882

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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