The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Oct. 22, 2008
Yoon-sung Um, Yongin-si, KR;
Hoon Kim, Ansan-si, KR;
Hye-ran You, Yongin-si, KR;
Jae-jin Lyu, Yongin-si, KR;
Seung-beom Park, Seoul, KR;
Yoon-Sung Um, Yongin-si, KR;
Hoon Kim, Ansan-si, KR;
Hye-Ran You, Yongin-si, KR;
Jae-Jin Lyu, Yongin-si, KR;
Seung-Beom Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In a thin film transistor, first and second thin film transistors are connected to an Ngate line and an Mdata line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode connected to an (N+1)gate line, a semiconductor layer overlapping with the gate electrode, a source electrode connected to the second sub pixel electrode and partially overlapping with the gate electrode, and a drain electrode facing the source electrode. A first auxiliary electrode is connected to the drain electrode and arranged on the same layer as the first and second sub pixel electrodes. An opposite electrode is arranged on the same layer as the gate line and at least partially overlaps with the first auxiliary electrode with at least one insulating layer disposed therebetween.