The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Mar. 20, 2009
Minseung Yoon, Seoul, KR;
Namseog Kim, Gyeonggi-Do, KR;
Pyoungwan Kim, Gyeonggi-do, KR;
Keumhee MA, Gyeongsangbuk-do, KR;
Chajea JO, Gyeonggi-Do, KR;
Minseung Yoon, Seoul, KR;
Namseog Kim, Gyeonggi-Do, KR;
Pyoungwan Kim, Gyeonggi-do, KR;
Keumhee Ma, Gyeongsangbuk-do, KR;
Chajea Jo, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.