The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2011

Filed:

Dec. 04, 2007
Applicants:

Yoshihiko Ozeki, Nukata-gun, JP;

Kenji Kouno, Gifu, JP;

Tetsuo Fujii, Toyohashi, JP;

Inventors:

Yoshihiko Ozeki, Nukata-gun, JP;

Kenji Kouno, Gifu, JP;

Tetsuo Fujii, Toyohashi, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/00 (2006.01); H01L 29/02 (2006.01); H01L 21/82 (2006.01); H01L 21/76 (2006.01); H01L 27/118 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device having plural active and passive elements on one semiconductor substrate is manufactured in the following cost effective manner even when the active and passive elements include double sided electrode elements. When the semiconductor substrate is divided into plural field areas, an insulation separation trench that penetrates the semiconductor substrate surrounds each of the field areas, and each of the either of the plural active elements or the plural passive elements. Further, each of the plural elements has a pair of power electrodes for power supply respectively disposed on each of both sides of the semiconductor substrate to serve as the double sided electrode elements.


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