The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Nov. 24, 2006
Applicant:
Kenzo Manabe, Tokyo, JP;
Inventor:
Kenzo Manabe, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes: a silicon substrate; and a field effect transistor including a gate insulating film over the silicon substrate, a gate electrode on the gate insulating film, and source and drain regions. The gate electrode includes, in part in contact with the gate insulating film, a crystallized Ni silicide region containing an impurity element of a conductivity type opposite to a conductivity type of a channel region in the field effect transistor.