The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Sep. 11, 2006
Yukihiro Yamashita, Osaka, JP;
Keita Takahashi, Nara, JP;
Yukihiro Yamashita, Osaka, JP;
Keita Takahashi, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The protection element of the present invention is constructed of a MOS capacitor composed of a semiconductor substrate, an insulating film formed on the semiconductor substrate and a word line formed on the insulating film. A well region having a conductivity type opposite to that of the semiconductor substrate is formed in a portion of the semiconductor substrate constituting the MOS capacitor. If charge exceeding the breakdown voltage of the insulating film constituting the MOS capacitor is induced in the word line, the induced charge is released into either the semiconductor substrate or the well region depending on whether the induced charge is positive or negative.