The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Jan. 24, 2008
Applicants:
Masatoshi Wakagi, Hitachinaka, JP;
Junichi Hanna, Yokohama, JP;
Inventors:
Masatoshi Wakagi, Hitachinaka, JP;
Junichi Hanna, Yokohama, JP;
Assignees:
Hitachi, Ltd., Tokyo, JP;
Tokyo Institute of Technology, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.