The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Sep. 22, 2010
Frank T. Shum, Sunnyvale, CA (US);
William W. SO, Sunnyvale, CA (US);
Steven D. Lester, Sunnyvale, CA (US);
Frank T. Shum, Sunnyvale, CA (US);
William W. So, Sunnyvale, CA (US);
Steven D. Lester, Sunnyvale, CA (US);
Bridgelux, Inc., Livermore, CA (US);
Abstract
Semiconductor devices in which one or more LEDs are formed include a dielectric region formed on a n/p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile