The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Apr. 07, 2010
Applicants:
Chiho Kokubo, Kanagawa, JP;
Hirokazu Yamagata, Tokyo, JP;
Shunpei Yamazaki, Tokyo, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co. Ltd., Atsugi-shi, Kanagawa-ken, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.