The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Nov. 16, 2006
Hon Hang Fong, Ithaca, NY (US);
Kiyotaka Mori, Cambridge, GB;
George M. Malliaras, Ithaca, NY (US);
Yu Jye Foo, Singapore, SG;
Hon Hang Fong, Ithaca, NY (US);
Kiyotaka Mori, Cambridge, GB;
George M. Malliaras, Ithaca, NY (US);
Yu Jye Foo, Singapore, SG;
Panasonic Corporation, Osaka, JP;
Cornell Research Foundation, Inc., Ithaca, NY (US);
Abstract
An electroluminescent (EL) device, including a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure includes: a first higher mobility semiconductor layer having a first mobility; a second higher mobility semiconductor layer having a second mobility; and a lower mobility semiconductor layer formed between the first higher mobility semiconductor layer and the higher mobility second semiconductor layer. The lower mobility semiconductor layer has a third mobility that is less than the first mobility and the second mobility. The semiconductor structure includes EL semiconducting material in the first higher mobility semiconductor layer, the second higher mobility semiconductor layer, and/or the lower mobility semiconductor layer. The first electrode is coupled to the first higher mobility semiconductor layer of the semiconductor structure. The second electrode is coupled to the second higher mobility semiconductor layer of the semiconductor structure.