The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Jan. 30, 2008
Osamu Shiino, Kiyose, JP;
Yoshinori Iwabuchi, Akishima, JP;
Ryo Sakurai, Kokubunji, JP;
Tatsuya Funaki, Yokohama, JP;
Osamu Shiino, Kiyose, JP;
Yoshinori Iwabuchi, Akishima, JP;
Ryo Sakurai, Kokubunji, JP;
Tatsuya Funaki, Yokohama, JP;
Bridgestone Corporation, Tokyo, JP;
Abstract
In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.