The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Jun. 23, 2009
Li-shu Tu, Taipei County, TW;
Li-Shu Tu, Taipei County, TW;
Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;
Abstract
A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile