The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2011

Filed:

Apr. 11, 2006
Applicants:

Kiyoshi Arita, Fukuoka, JP;

Akira Nakagawa, Saga, JP;

Inventors:

Kiyoshi Arita, Fukuoka, JP;

Akira Nakagawa, Saga, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/00 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

By performing plasma etching on the second surface of a semiconductor wafer on the first surface of which an insulating film is placed in dividing regions and on the second surface of which a mask for defining the dividing regions are placed, the second surface being located opposite from the first surface, the insulating film is exposed from an etching bottom portion by removing portions that correspond to the dividing regions. Subsequently, by continuously performing the plasma etching in the state in which the exposed surfaces of the insulating film are charged with electric charge due to ions in the plasma, corner portions put in contact with the insulating film are removed. Subsequently, by removing the mask and thereafter performing plasma etching on the second surface, corner portions located on the second surface side are removed.


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