The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2011

Filed:

Feb. 23, 2007
Applicants:

Abebe Hailu, San Jose, CA (US);

Weilu Xu, San Jose, CA (US);

Xiaoguang MA, Fremont, CA (US);

Chung-hee Chang, Fremont, CA (US);

Shoutao Wang, Fremont, CA (US);

Charles C. Chen, Fremont, CA (US);

Inventors:

Abebe Hailu, San Jose, CA (US);

Weilu Xu, San Jose, CA (US);

Xiaoguang Ma, Fremont, CA (US);

Chung-Hee Chang, Fremont, CA (US);

Shoutao Wang, Fremont, CA (US);

Charles C. Chen, Fremont, CA (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A perpendicular magnetic recording medium comprises a layer stack formed over a surface of a non-magnetic substrate, and comprising, in overlying sequence from the surface: a magnetically soft underlayer; an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material formed thereon; and at least one crystallographically oriented, magnetically hard, perpendicular magnetic recording layer on the interlayer structure; wherein the interlayer structure is a triple-layer stacked structure comprising: a first interlayer of a first non-magnetic material proximal the magnetically soft underlayer and containing Ru; a second interlayer of a second non-magnetic material in overlying contact with the first interlayer and not containing Ru; and a third interlayer of a third non-magnetic material in overlying contact with the second interlayer and containing Ru.


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