The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Feb. 05, 2008
Colin Wolden, Denver, CO (US);
Michael T. Seman, Golden, CO (US);
Colin Wolden, Denver, CO (US);
Michael T. Seman, Golden, CO (US);
Colorado School of Mines, Golden, CO (US);
Abstract
TaOand AlOthin films were fabricated by pulsed plasma-enhanced chemical vapor deposition (PECVD) with simultaneous delivery of Oand the metal precursor. By appropriately controlling the gas-phase environment self-limiting deposition at controllable rates (˜1 Å/pulse) was obtained. The process was insensitive to substrate temperature, with a constant deposition rate observed from 90-350° C. As-deposited TaOfilms under these conditions displayed good dielectric properties. Performance improvements correlate strongly with film density and composition as measured by spectroscopic ellipsometry and Fourier transform infrared spectroscopy. Pulsed PECVD eliminates the need for gas actuation and inert purge steps required by atomic layer deposition.